#
# top.uni.aps.anl.gov:/home/www/beamtime-requests/req00223.txt
# UNICAT Member Beam Time Request  #223

# created Sun Dec 02 17:09:10 CST 2001
#
beamline:
	33ID

collaboration:
	Yes

contact:
	czoschke@uiuc.edu

days:
	4

description:
	Pulsed Laser Deposition (PLD) has many advantages over other film growth 
	techniques: a high degree of stoichiometry in the film grown, low 
	deposition temperature and a great flexibility in the types of materials 
	that can be ablated.  TiN is an important industrial thermal barrier 
	coating whose TBC and mechanical properties depend greatly on the quality 
	of growth, often highly dependent on the epitaxy of the first few 
	layers.  Although studies have been done directed at understanding the 
	growth process they are usually ex-situ and post deposition, hence 
	insensitive to these critical initial stages.  We propose using the PLD 
	chamber at UNICAT to do an in situ study of this process on a sapphire 
	substrate as TiN is ablated onto the surface.  During deposition, 
	measurements would be taken continuously and simultaneously at the
	(0 0 1/2) and (0 1 1/2) points for TiN.  Using these data we hope to learn about 
	the in-plane and out-of-plane ordering on the surface during and between 
	deposition pulses.

equipment+required:
	PLD chamber

experiment:
	In situ study of layer-by-layer ripening of TiN films on sapphire using Pulsed Laser Deposition

foreign+nationals:
	Z. Q. Ma

hazards:
	

minimumdays:
	3

name:
	Peter Czoschke

new+request:
	on

nonmembers:
	

unacceptable+dates:
	Jan 26-29
	March 16-25


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